Samsung Electronics advances mass production of 10nm level seventh generation 1D DRAM, plans to introduce devices in the first half of next year BlockBeats News: On June 17th, according to Citrini researcher Jukan, Samsung Electronics is preparing for mass production of the seventh generation 1D DRAM at the 10nm level. The company plans to introduce equipment in the first half of next year and start initial production as early as the end of next year. The current line width of the 1D DRAM is about 11-12nm, while the 1D DRAM will be further reduced to 10-11nm to improve performance and energy efficiency. The development progress of this process is relatively advanced, but key equipment is still in the development stage. Samsung and its partners are actively conducting yield and performance optimization research and development, and plan to refine the schedule before the end of the year. 1D DRAM will serve as the core of Samsung's AI memory business, especially for the HBM5E high bandwidth memory core chip expected to be commercially available in 2029, supporting its competitiveness in the AI chip supply chain. [Original link]