[Elon Musk Comments on CXMT's Technological Progress: China's Mass Production Capability is Exceptional, but More Advanced Memory Architectures Pose Greater Challenges] DeepTech TechFlow reports that on October 13, in response to news about China's ChangXin Memory Technologies (CXMT) making progress in the new 4F² DRAM architecture and planning to launch DDR5 server memory, Elon Musk commented that once China masters the manufacturing technology of a product, its mass production capability often surpasses the combined output of the rest of the world. The lithium battery and solar industries are proof of this. Elon Musk noted that memory (RAM) was considered a low-margin commodity about three years ago, and China now seems to be rapidly advancing in LP5 and LP6 memory technologies that adhere to general standards. However, he also emphasized that the technical challenges are stratified. Cutting-edge technologies such as high-bandwidth memory (HBM) architectures, static random-access memory (SRAM) layers beneath the logic layer, and achieving 3D-stacked RAM while ensuring effective heat dissipation for the logic layer will pose significantly greater challenges for China to overcome. Due to competitive pressures in the related industries, memory chip stocks such as Micron Technology (MU), SanDisk (SNDK), Samsung, and SK Hynix have recently seen declines.