[SK Hynix Initiates 3D Stacked DRAM Development, Pioneering Edge AI Storage Technology] BlockBeats News, July 24: SK Hynix is accelerating the development of next-generation DRAM technology for edge AI—3D stacked DRAM. According to reports, the company has recently launched a talent recruitment program and plans to collaborate with U.S. clients to jointly design related technologies. The 3D stacked DRAM design represents a next-generation semiconductor technology, stacking memory chips directly on top of logic semiconductors (system semiconductors). Industry experts predict that in the era of physical AI following generative AI, this technology will become the core semiconductor solution for edge AI devices. SK Hynix is currently recruiting 3D stacked DRAM design engineers through its Americas subsidiary located in San Jose, USA, to advance the development of related technologies. Click the link below to access the original article and join the Beating · Feishu AI News Channel for 24/7 global AI news and updates. [Original Link]