The yield rate of Samsung HBM4E has exceeded 70%, and the next generation DRAM process D1d target will be approved for production preparation in November BlockBeats News: On July 1st, Samsung Electronics made progress in the development of HBM4E (7th generation) and next-generation DRAM after mass producing the world's first HBM4 (6th generation). Song Jae hyuk, CTO of Samsung Electronics DS Division and Director of Semiconductor Research Institute, stated at an internal business status briefing on June 30th that the HBM4E reliability testing yield has increased to over 70%. It is generally believed in the industry that a yield rate exceeding 80% enters the stage of stable "mature yield" in the process; Considering that HBM4E is still in the reliability testing phase, over 70% is considered as an indicator that the development is entering a stable range. Samsung Electronics was the first to mass produce and ship the HBM4 in February this year, and on May 29th, released detailed technical specifications for the HBM4E 12 layer product, shipping samples to major customers. HBM4 will be used for Nvidia's upcoming AI accelerator Vera Rubin in the second half of the year, while HBM4E is expected to be used for Nvidia's next-generation AI accelerator Vera Rubin Ultra and other products to be launched next year. The development of Samsung's next-generation DRAM technology is also progressing smoothly. Song Jae hyuk believes that the D1d process technology has an advantage over its competitors in terms of competitiveness, and is aiming to obtain production preparation approval in November to promote development. D1d is the core DRAM process that Samsung plans to apply starting from the next generation HBM5 (8th generation). If it is pushed forward as planned, it will have a positive impact on the competitiveness of the next generation DRAM and subsequent HBM5 products. (Fnnews) [Original link]