[SK Hynix to Begin Mass Production of 375-Layer NAND by Year-End, 'Replacing Tungsten with Molybdenum' Expected to Boost Performance] According to a report by Golden Finance on June 11, citing South Korean tech media outlet *THEELEC*, SK Hynix has completed production validation for its next-generation V10 series 375-layer 3D NAND flash memory and is advancing production line transitions. The company aims to achieve large-scale mass production by 2026 through upgrades to existing factories, challenging Samsung Electronics' leading position in ultra-high stacking technology. The highlight of this technological iteration lies in the material innovation of the metal wiring layer, replacing some word lines from traditional tungsten to molybdenum. As 3D NAND progresses toward over 600 layers, molybdenum is expected to become a critical key material in the era of ultra-high stacking.