[Samsung to Collaborate with TSMC on Producing NVIDIA's Next-Generation Custom HBM, Base Die to Use 3nm Process] According to DeepTech TechFlow on October 18, as reported by *The Seoul Economic Daily*, Samsung Electronics will adopt TSMC's 3nm process to produce the core component Base Die for NVIDIA's next-generation custom high-bandwidth memory (NVHBM). NVIDIA has simultaneously required Samsung, SK Hynix, and Micron to standardize on TSMC's 3nm Base Die and unify the Core Die to the sixth-generation DRAM 1c process to enhance product consistency across different suppliers. This marks the first time Samsung is collaborating with TSMC on HBM production from the manufacturing stage. Previously, Samsung independently produced both the Core Die and Base Die for HBM. However, this time, Samsung is adjusting its integrated supply model to meet NVIDIA's technical requirements. Nevertheless, Samsung will continue to maintain its in-house foundry strategy for standard HBM and custom HBM tailored for other clients such as AMD.