[Samsung and ASML Collaborate to Develop Next-Generation EUV Lithography Masks] BlockBeats News, September 9, according to the Seoul Economic Daily, Samsung Electronics will collaborate with ASML, the world's largest lithography equipment manufacturer, to jointly develop high numerical aperture (High-NA) extreme ultraviolet (EUV) lithography technology. Samsung is participating in an initiative aimed at shifting industry standards from the 6-inch photomasks used since the 1980s to 12-inch versions, striving to take the lead in establishing a DRAM mass production system based on High-NA EUV equipment. Samsung plans to apply High-NA EUV equipment to DRAM production starting in 2028, and subsequently expand this technology to the 1.4nm advanced logic process to drive the growth of its foundry business. The expansion of mask sizes is intended to address the limitations of EUV technology. High-NA EUV has a numerical aperture 66% higher than traditional EUV, enabling the creation of more precise circuit patterns. Replacing the currently used 6-inch masks with 12-inch masks can improve wafer fab production efficiency and reduce chip manufacturing costs.