[Samsung HBM4E Yield Rate Surpasses 70%, Seventh-Generation AI Memory Development Enters Stable Phase] According to a report by Golden Finance, on July 1, Samsung Electronics' Chief Technology Officer and head of the Semiconductor Research Institute stated during an internal business briefing at the DS (Device Solutions) division that the reliability test yield rate for HBM4E has risen above 70%. The industry typically considers a yield rate of over 80% as the threshold for "mature yield" indicating process stability, and while HBM4E is still in the reliability testing phase, the level above 70% is regarded as a milestone marking the development process officially entering a stable zone. At the same event, he revealed that the next-generation 10nm-class seventh-generation DRAM process (D1d) has achieved a competitive technological advantage over rivals and is scheduled to complete production readiness certification (PRA) by November this year.