一起发财|5月 31, 2026 07:35
Many people have a misconception that lasers with higher power are better. For example, LiTe can achieve 100mW, while SiVe is 65mW. In reality, in physics, there is no direct linear relationship between power and single channel bandwidth. The laser is a CW (Continuous Wave) light source, which is only responsible for emitting a high brightness, data free "light track". The one who truly writes the data of 0 and 1 into the light is the back-end silicon modulator. The switching speed (Baud Rate) of the modulator and the performance of the electronic chip (SerDes) directly determine the maximum bandwidth of a single wavelength.
The flagship product of LiTe (represented by Lumentum's A8/UHP series) can even exceed 100mW in single tube power, and it focuses on the "scale out" market, serving mainstream switch networks and public cloud data centers. By providing mature and standardized single point high-power external light sources (such as ELSFP modules), third-party standard silicon optical pluggable optical modules with 400G/800G or even 1.6T can be forcibly split and fed to overcome the extreme optical link losses in traditional long-distance optical communication.
However, compound semiconductor lasers (InP, indium phosphide) are extremely temperature sensitive. High power single tubes face physical challenges such as severe heat generation, deteriorating lifespan, and difficulty in multi wavelength coordinated alignment; And the cost of high-power splitting is extremely high. To convert a single 100mW tube into 8 wavelengths, it usually requires the combination of 8 high-power chips with different wavelengths, or the use of complex external star couplers. The bias current of the single tube itself is large, and the power consumption is extremely high. This results in the inability of the LiTe route to directly compress power to adapt to extreme integration scenarios.
SiVe, on the other hand, is completely different. It operates in the "scale up" market for customized computing power and is deeply bound to the extreme silicon optical ecosystem of Ayar Labs, which directly attaches optical I/O engines to GPU packaging edges (XPU to XPU). This scenario does not require high single point power, but has almost twisted iron law requirements for space occupation, ultra-low power consumption, and absolute synchronization of multi-channel wavelengths. The advantage of SiVe is that it highly integrates multi-channel laser arrays on a single chip, allowing all wavelengths to be in the same temperature field and process environment. The wavelength synchronization stability is extremely high, eliminating complex temperature control alignment overhead and significantly reducing power consumption per bit (pJ/bit).
In this latest generation of photonic integrated connection system, it is precisely thanks to the underlying support of this multi wavelength chip in terms of stability and power consumption that the system adopts a parallel multiplexing architecture of "8 ports x 16 wavelengths x 64Gbps". Currently, the maximum bandwidth that the new generation system level configuration can provide is unidirectional 8 Tbps and bidirectional 16 Tbps.
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