Last night, NVTS rose sharply, and yesterday afternoon this tweet also talked about being optimistic about NVTS. Let's talk about why SiC/GaN is crucial in the era of HVDC? 1) The essence of HVDC is to boost and reduce current, while the essence of SiC/GaN is to make high-voltage and high-speed switches available. The bottleneck of AI data centers is expanding from whether there is a GPU to whether there is electricity and whether it can efficiently deliver electricity to the GPU. 2) 800VDC reduces copper and conversion levels, but increases the difficulty of high-voltage DC protection, hot swapping, and fault isolation. SiC/GaN solves these problems perfectly. SiC undertakes high-voltage and high-power backbone: SST, America, BESS, fast charging, traction inverter, solid-state protection. GaN undertakes high-frequency and high-density conversion: PSU, PFC, LLC, IBC, 800V to 12V/6V, server near load power supply. 3) As AI racks move from 100kW to 500kW and 1MW, every percentage point of efficiency means less heat, less cooling, and higher GPU deployment density. 4) The future power system will increasingly resemble a semiconductor system: high-frequency, high-voltage, modular, software controlled, hot swappable, and bi-directional flow. SiC/GaN is the core switch of this system. The era of HVDC is not about SiC and GaN replacing each other, but about SiC/GaN jointly replacing traditional low-voltage multi-level silicon-based power architectures. SiC is responsible for safely and efficiently delivering MW level high-voltage power into the system, while GaN is responsible for delivering power at extremely high power density to the vicinity of chips and loads. AI data centers, 800V EVs, fast charging, energy storage, and industrial microgrids will jointly drive these two types of technologies from "high-end options" to "infrastructure necessities". Data centers are undergoing fundamental changes in their power infrastructure, with server rack ratings rapidly rising from kilowatts to nearly megawatts. The industry is shifting towards high-voltage direct current (HVDC) architecture to improve efficiency and reliability, reduce copper usage, and support more compact system design. The third-generation semiconductors - SiC and GaN - are the key driving forces behind this transformation. The trend of high voltage direct current in AI data centers and the accelerated adoption of high voltage architectures in electric vehicles are driving the continued growth of SiC and GaN technologies in global infrastructure Be optimistic about these types 1) Core platform types: Infineon, TI This type of company has high-voltage components, controllers, isolation, drive, protection, and system solutions, suitable for complex architectures of 800VDC. 2) Core players of Sic/GaN power semiconductors: Navitas, Innoscience, Power Integrations. Elasticity comes from AI server PSU, 800V to 12V/6V, PFC, LLC, IBC, but risks include customer certification, foundry migration, price competition, and reliability verification. This article is sponsored by @ bitget_zh, titled 'Bitget Buying US Stocks: Instant Entry, Smooth Trading'