[Samsung Electronics Submits Latest HBM Patent to Address Reliability Issues in High-Stacked Memory] BlockBeats News, June 30, according to researcher Jukan from Citrini, Samsung Electronics has submitted its latest HBM patent, which resolves reliability issues in high-stacked (12 layers or more) memory by improving the structure of the topmost dummy die. The core of the patent involves designing the side of the dummy die into a three-tiered stepped structure with a convex curved surface, utilizing deep trench sawing technology to reduce warping, cracks, and delamination, while optimizing thermal management and bonding interface cleanliness. This innovation targets products like HBM5 with 16 layers or more, significantly improving yield rates and long-term stability, and helping Samsung enhance its competitiveness in the AI high-bandwidth memory market. [Original Link]